13th International Conference on Fracture June 16–21, 2013, Beijing, China -3- Table 3. Parameters of Radiation experiments Current Beam spot size Flux Time 0.9μA 4cm2 1.4×1012/cm2·s 2h 4. Results and discussion By nano-indentation, nano-scratch and other methods, the surface roughness, reflectivity, hardness, Young modulus and friction coefficient of irradiated SiC films are measured and analyzed. Deposited amorphous SiC films were employed as contrast samples. 4.1 Surface roughness and reflectivity Surface topography of the films was observed by nano-indentation scan. As the 3D and plane topography showed in Fig. 2, the irradiated films demonstrates a similar surface topography with the contrast one. The average surface roughness of the irradiated silicon carbide film is 27nm, while the contrast one is 29nm. Figure 2. (a) 3D surface topography of irradiated SiC films; (b) 3D surface topography of contrast SiC films; (c) Plane surface topography of irradiated SiC films; (d) Plane surface topography of contrast SiC films.
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