13th International Conference on Fracture June 16–21, 2013, Beijing, China -6- suffers less radiation damage. 500nm SiC films are deposited on 4 in. (100) silicon substrates by PECVD, and then annealed to obtain low stress SiC films. The prepared SiC films are irradiated by 1MeV protons in an accelerator at room temperature for 2 hours. The irradiated film suffers a decrease in hardness and Young modulus, but keeps the same in friction coefficient and surface topography as the contrast films. Acknowledgements This work is supported by the National Natural Science Foundation of China (grant nos 91023045 and 61176103), Key Laboratory Fund (no.9140C790103110C7903) and Doctoral Program Fund (no. 20110001110103). The authors appreciate the State Key Laboratory of Nuclear Physics and Technology in Peking University for assist in radiation experiments. References [1] P.M. Sarro, Silicon carbide as a new MEMS technology, Sensors and Actuators A: Physical, 82(2000) 210–218. [2] P.M. Sarro, C.R. deBoer, E. Korkmaz, J.M.W. Laros, Low-stress PECVD SiC thin films for IC-compatible microstructures, Sensors and Actuators A: Physical, 67(1998)175–180. [3] H. R. Shea, Radiation sensitivity of microelectromechanical system devices, J. Micro/Nanolith. MEMS MOEMS, 8(2009). [4] E.G. Stassinopoulos, J.P. Raymond, The space radiation environment for electronics, Proceedings of the IEEE, 76(1988)1423–1442. [5] L.L Snead, S.J Zinkle, J.C Hay, M.C Osborne, Amorphization of SiC under ion and neutron irradiation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 141(1998)123–132. [6] M. Ishimaru, I.T Bae, A. Hirata, Y. Hirotsu, J.A. Valdez, K.E. Sickafus, Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242(2006)473–475. [7] T. Hernández, E.R. Hodgson, M. Malo, A. Morono, Radiation induced electrical and microstructural degradation at high temperature for HP SiC, Fusion Engineering and Design, 86 (2011) 2442–2445. [8] J. F. Ziegler, M.D. Ziegler, J.P. Biersack, SRIM-The stopping and range of ions in matter, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268(2010)1818–1823.
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