13th International Conference on Fracture June 16–21, 2013, Beijing, China -10- residual stress and decrease the metal electrode layer or particles induced bonding failure risk. Thus the new scheme would achieve a stronger bonding quality and a higher bond yield. From the torsional fracture tests of well-established anchor-beam MEMS devices, we conclude that the torsional bonding strength of array-shaped anchor is stronger than that of single anchor in practical application. This array-shaped anchor has a promising application in microdevice design with scaling-down. Acknowledgements This research was supported by National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University. It was financed by the National Basic Research Program (also called 973 Program, Project No. 2011CB309502). References [1] Nanver, L.K., et al. Special RF/microwave devices in Silicon-on-Glass Technology. in Bipolar/BiCMOS Circuits and Technology Meeting. BCTM . IEEE. 2008. [2] Larsen, K.P., J.T. Ravnkilde and O. Hansen. SOI silicon on glass for optical MEMS. in TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on. 2003. [3] Kobayashi, J., et al., A Microfluidic Device for Conducting Gas-Liquid-Solid Hydrogenation Reactions. Science, 2004. 304(5675): p. 1305 -1308. [4] Boser, B.E. and R.T. Howe, Surface micromachined accelerometers. Solid-State Circuits, IEEE Journal of, 1996. 31(3): p. 366-375. [5] Najafi, K. Recent progress in micromachining technology and application in implantable biomedical systems. in Micro Machine and Human Science. MHS '95., Proceedings of the Sixth International Symposium on. 1995. [6] Schmidt, M.A., Wafer-to-wafer bonding for microstructure formation. Proceedings of the IEEE, 1998. 86(8): p. 1575-1585. [7] Lasky JB., Wafer bonding for silicon-on-insulator technologies. Applied Physics Letters. 1986.48(1): p. 78-80. [8] Gösele, U., et al., Wafer bonding for microsystems technologies. Sensors and Actuators A: Physical, 1999. 74(1–3): p. 161-168. [9] Knowles, K.M. and A.T.J. van Helvoort, Anodic bonding. International Materials Reviews, 2006. 51(5): p. 273-311. [10] Wiemer, M., et al. Waferbond technologies and quality assessment. in Electronic Components and Technology Conference. ECTC . 58th. 2008. [11] Inzinga, R.A., et al., Characterization and Control of Residual Stress and Curvature in Anodically Bonded Devices and Substrates with Etched Features. 2012. 52(6): p. 637-648. [12] Chen, W.T. and C.W. Nelson, Thermal Stress in Bonded Joints. IBM Journal of Research and Development, 1979. 23(2): p. 179-188.
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