13th International Conference on Fracture June 16–21, 2013, Beijing, China -1- Experiments on the mechanical behavior of anodically bonded interlayer of Pyrex Glass/Al/Si Yu-Qun Hu1,*, Ya-Pu Zhao2 1 College of Civil Aviation and Flight, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China 2 State Key Laboratory of Nonlinear Mechanics (LNM), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China * Corresponding author: hyq@nuaa.edu.cn Abstract The MEMS/NEMS devices present an attractive prospect in many areas, especially in aviation and aerospace. Anodic bonding is one of the key technologies for the manufacturing of integrated 3-D structures of these devices. In this paper, based on experiments and detailed analysis, a systematic study will be made in depth for the mechanical behavior of anodically bonded interlayer within micro-scale structures. In accordance with a typical anodically bonded structure from one kind of MEMS micro accelerometer, a series of anodic bonding and mechanical tests were completed, for the behavior of the interlayer under quasi-static loading. The paper also presents the analysis of some important factors which influence the mechanical properties of the anodically bonded structure of Pyrex 7740 Glass/Al/Si. The metal oxidation reaction, dendritic nanostructures, and fractal patterns, which taking place at the bonding interface, were scrutinized. The experimental results demonstrate the thickness effect of the intermediate layer, and that the bonding tensile strength increases with the bonding temperature and voltage, but it decreases with the increase of the thickness of Al intermediate layer. The formation of the nanostructures in the bonding interlayer is also helpful to enhance the anodic bonding strength. Keywords Anodic bonding, MEMS/NEMS, Intermediate layer, 1. Introduction Three-dimensional (3-D) integration technologies related to Micro/Nano Electro-Mechanical Systems (MEMS/NEMS) devices is becoming one of focused research areas[1-5]. Anodic bonding is one of the key technologies for the manufacturing of integrated 3-D structures of these devices. In MEMS/NEMS devices, anodic bonding technology, especially for the connection of multilayer materials, offers a great prospect to extend the structural integration of the devices from two-dimensional (2-D) to 3-D, as shown in Figure 1. 3-D integration based on anodic bonding offers the potential for high performance and high-density applications due to lower power consumption, enhanced transmission speeds, better performance, and smaller device size[6]. (a) The integration of devices from 2-D to 3-D (b) 3-D integration for MEMS devices Figure 1. The trend for the integration of MEMS/NEMS devices (revised from reference [1] ) Anodic bonding, also known as electrostatic bonding or field-assisted bonding, was developed as a means to connect metals, alloys or semiconductors to conductive glasses. It is also a highly
RkJQdWJsaXNoZXIy MjM0NDE=